Chip transferring method and the apparatus thereof

ABSTRACT

A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This present application is a continuation application of U.S. Pat.Application, Ser. No. 17/367,067, filed on Jul. 2, 2021, which is acontinuation application of U.S. Pat. Application, Ser. No. 16/257,886,filed on Jan. 25, 2019, now pending, claiming the benefit of priority ofTW Patent Application No. 107102652 filed on Jan. 25, 2018, the entiretyof which is incorporated by reference herein.

TECHNICAL FIELD

The present disclosure relates to a chip transferring method and theapparatus thereof, in particular to the chip transferring method and theapparatus thereof for light-emitting-diode chips.

DESCRIPTION OF THE RELATED ART

During the process for making semiconductor chips, each wafer iscompleted through several to hundreds processes, and the completed waferis divided into a plurality of regions, which is then diced into aplurality of chips. Before or after dicing, the regions need to undergoa series of tests to confirm the characteristic values of differentcharacteristics so as to ensure that the specifications of the producedchips meet the requirements. Taking the light-emitting-diode chips as anexample, after the epitaxy is grown on the substrate, the electrodes areformed on the epitaxy by an evaporation process, and then the scribinglines are formed in the epitaxy by photolithography and etchingprocesses to define a plurality of regions. The plurality of regionsseparated by the scribing lines is then diced into a plurality ofseparated chips. After the photoelectric characteristic values of theplurality of chips are tested by the probe, the test results arerecorded into a wafer map file by a classification code, and accordingto the customer or the user’s requirements, the plurality of chips iscategorized based on the wafer map file. When categorizing, the data onthe wafer map file firstly corresponds to each chip, and the requiredchips are sorted and picked one by one by a sorter, and then put on acollecting film of a bin table. The pick-and-put action is repeated tillthe categorizing is completed. However, in the sorting process by thesorter, it takes a lot of time for the robot of the sorter to travelbetween the wafer and the bin table. Taking a commercial sorting machineas an example, only four chips can be picked out per second. It takesabout three hours to complete the entire categorizing process for awafer containing 40,000 chips, which affects the manufacturingefficiency.

SUMMARY OF THE DISCLOSURE

A chip transferring method includes providing a plurality of chips on afirst load-bearing structure; measuring photoelectric characteristicvalues of the plurality of chips; categorizing the plurality of chipsinto a first portion chips and a second portion chips according to thephotoelectric characteristic values of the plurality of chips, whereinthe second portion chips comprise parts of the plurality of chips whichphotoelectric characteristic value falls within an unqualified range;removing the second portion chips from the first load-bearing structure;dividing the first portion chips into a plurality of blocks according tothe photoelectric characteristic values, and each of the plurality ofblocks comprising multiple chips of the first portion chips; andtransferring the multiple chips of one of the plurality of blocks to asecond load-bearing structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a chip transferring apparatus in accordancewith a first embodiment of the present disclosure.

FIG. 2 is a top view of the first load-bearing structure disclosed inthe first embodiment of the present disclosure.

FIGS. 3A to 3D are flowcharts of single-batch transfer of the pluralityof chips in accordance with a first embodiment of the presentdisclosure.

FIG. 4 is a top view of the second load-bearing structure in accordancewith a first embodiment of the present disclosure.

FIGS. 5A to 5D are flowcharts of single-batch transfer of the pluralityof chips in accordance with a second embodiment of the presentdisclosure.

FIG. 6 is a top view of the second load-bearing structure in accordancewith a second embodiment of the present disclosure.

FIG. 7 is a top view of the second load-bearing structure in accordancewith a third embodiment of the present disclosure.

FIG. 8 is a portion view of a chip transferring apparatus in accordancewith the third embodiment of the present disclosure.

FIG. 9 is an explosion diagram of the optoelectronic system inaccordance with the fourth embodiment of the present disclosure.

FIG. 10 is an optoelectronic system in accordance with the fifthembodiment of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The following embodiments, in conjunction with the accompanyingdrawings, will illustrate the concept of the present disclosure. In thedrawings or the description, similar or identical portions are denotedby the same reference numerals, and in the drawings, the shape orthickness of the elements can be enlarged or reduced. Particularly,elements not shown or described in the drawings can be known to thoseskilled in the art.

FIG. 1 discloses a chip transferring apparatus 1500 in accordance with afirst embodiment of the present disclosure, wherein the componentsincluded in the chip transferring apparatus 1500 are illustrated inblock diagrams. The chip transferring apparatus 1500 includes a firstload-bearing structure 1100, a chip positioning mechanism 1600 whichincludes an image recognizer 1610 such as charge coupled device (CCD)and a computer 1620, a separation mechanism 1800 which includes aseparator 800, an image recognizer 810 and a computer 820, a secondload-bearing structure 1200 and a transfer mechanism 1900 which includea presser 700.

FIG. 2 is a top view of the first load-bearing structure 1100 inaccordance the first embodiment of the present disclosure. As shown inFIG. 2 , the first load-bearing structure 1100 has the function offixing and bearing the chips. For example, the first load-bearingstructure 1100 includes a structure with a surface having adhesivematerial, such as an adhesive tape, formed thereon. In an embodiment,the adhesive tape is selected from a white film tape, a blue film tapeor a UV tape. In the embodiment, the blue film tape is used. The firstload-bearing structure 1100 includes a fist surface 1101 which isadhesive. In the following process, the chips can be fixed by theadhesion of the first surface 1101. In an embodiment, the firstload-bearing structure 1100 is fixed on a metal expansion ring 1000, andthen expanded by the metal expansion ring 1000 to increase the distanceamong the chips on the blue film tape of the first load-bearingstructure 1100 so as to facilitate the subsequent transferring process.As shown in FIG. 2 , the first surface 1101 of the first load-bearingstructure 1100 bears a plurality of chips 1110, such as LED chips,solar-cell chips or transistor chips, which undergoes dicing andexpansion process. In the embodiment, LED chips 1110 are used. Thematerial of the LED chips 1110 includes Al_(x)In_(y)Ga_((1-x-y))N orAl_(x)In_(y)Ga_((1-x-y))P, wherein 0≦x, y≦1 and (x+y)≦1. When thematerial of the LED chips 1110 includes AlInGaP, red light with awavelength between 610 nm and 650 nm or green light with a wavelengthbetween 530 nm and 570 nm can be emitted. When the material of the LEDchips 1110 includes InGaN, blue light with a wavelength between 400 nmand 490 nm can be emitted. Or when the material of the LED chips 1110includes AlGaN or AlInGaN, UV light with a wavelength between 250 nm and400 nm can be emitted. In the embodiment, the light emitted from the LEDchips 1110 is blue light. The LED chips 1110 with other emission colorcan also be applied to other embodiments of the present disclosure.

Next, each of the LED chips 1110 undergoes multiple detections forphotoelectric characteristic values. In the embodiment, the detectedphotoelectric characteristic values of the LED chips 1110 include aluminescence, a light-emitting wavelength, an operating voltage, anelectric current, and so on. The photoelectric characteristic values ofall LED chips 1110 after the detections form many wafer map files basedon the positions of the LED chips on the first load-bearing structure1100 and the photoelectric characteristic values thereof. Taking theluminescence as an example, a wafer map file is formed by theluminescence of the LED chips in accordance with the positions. Each ofthe detected photoelectric characteristic value or a combination thereofcan be subsequently used as an index for specification categorization.In the embodiment, the dominant wavelength (W_(d)) is used as an indexfor specification categorization of the photoelectric characteristicvalues. According to the specification control mechanism of theproducts, the dominant wavelength of the qualified LED chips 1110 isdefined as 450±10 nm, that is, 440 nm to 460 nm, and the LED chips 1110with the dominant wavelength under 440 nm or above 460 nm are defined asthe unqualified chips, i.e. the chips with unqualified photoelectriccharacteristic values.

The above-mentioned photoelectric characteristic values detection canalso be repeated according to other characteristic values such as theluminescence, the operating voltage, or the electric current. Afterdetecting the photoelectric characteristic values of each of the LEDchips 1110 one by one, according to the detection result of thecharacteristic values, the photoelectric characteristic values of eachof the LED chips 1110 disposed on the first surface 1101 of the firstload-bearing structure 1100 are recorded in the wafer map file based onthe positions of the LED chips 1110. In the embodiment, according to thewafer map file of the dominant wavelength of each LED chip, the LEDchips 1110 with the dominant wavelength W_(d) between 440 nm and 460 nmare defined as the qualified chips 1111, and the LED chips 1110 with thedominant wavelength W_(d) under 440 nm (W_(d) < 440 nm) or above 460 nm(W_(d) > 460 nm) are defined as the unqualified chips 1112. In anembodiment, the dominant wavelength of the qualified chips 1111 can befurther divided into a plurality of subranges according to the user’srequirements.

FIGS. 3A to 3D are flowcharts of single-batch transfer of a plurality ofchips in accordance with the first embodiment of the present disclosure.FIG. 3A is a cross-sectional view of the first load-bearing structure1100 taken along A-A′ in the FIG. 2 . As shown in FIG. 3A, the firstsurface 1101 of the first load-bearing structure 1100 bears a pluralityof LED chips 1110 thereon. Each of the LED chips 1110 includes a topsurface 1113 and an attaching surface 1115 opposite to the top surface1113, and the LED chips 1110 are attached to the first surface 1101 withthe attaching surface 1115. The first load-bearing structure 1100further includes a back surface 1121 opposite to the first surface 1101.Referring to FIG. 3A, the first load-bearing structure 1100 bears afirst portion of the plurality of LED chips categorized as the qualifiedchip 1111 whose photoelectric characteristic value (for example,dominant wavelength) falls within the qualified range, and a secondportion of the plurality of LED chips categorized as the unqualifiedchips 1112 whose photoelectric characteristic value (for example,dominant wavelength) falls within the unqualified range.

Next, as shown in FIG. 3B, during the process of transferring theplurality of chips, the image recognizer 1610 of the chip positioningmechanism 1600 shown in FIG. 1 , such as a chip locator 1610′ in theembodiment, is used to confirm the relative positions of the pluralityof LED chips 1110 on the first load-bearing structure 1110, and thecomputer 1620 is used to construct and apply the wafer map file of thephotoelectric characteristic values of the plurality of LED chips 1110so as to distinguish the positions of the qualified chips 1111 and theunqualified chips 1112 and then feed it back to the separation mechanism1800. The computer 820 of the separation mechanism 1800 sets a pathaccording to the aforementioned wafer map file. As shown in FIG. 3B, theseparator 800 of the separation mechanism 1800, such as a liquid coatingdevice in the embodiment, coats a liquid 900, such as an adhesionreducing agent, on the top surface 1113 (opposite to the attachingsurface 1115) of each of the unqualified chips 1112 according to thepath set by the computer 820. The liquid 900 solidifies on the topsurface 1113 of each of the unqualified chips 1112 to form a thin film910 whose surface characteristic is different from that of the topsurface 1113. Next, referring to FIG. 3C, the second load-bearingstructure 1200 is disposed on the top surface 1113 of the LED chips1110. The second load-bearing structure 1200 has the function of fixingand bearing the chips. For example, the second load-bearing structure1200 includes a structure with a surface having adhesive material, suchas an adhesive tape, formed thereon. In an embodiment, the adhesive tapeis selected from a white film tape, a blue film tape, or a UV tape. Inthe embodiment, the blue film tape is used. The second load-bearingstructure 1200 includes a second surface 1201 which is adhesive andfacing the top surfaces 1113 of the plurality of LED chips 1110 and thefirst surface 1101 of the first load-bearing structure 1100. In anembodiment, the thin film 910 includes a surface characteristicdifferent from that of the top surface 1113. In the embodiment, a firstadhesion exists between the thin film 910 and the second surface 1201 ofthe second load-bearing structure 1200, a second adhesion exists betweenthe top surfaces 1113 of the plurality of LED chips 1110 and the secondsurface 1201 of the second load-bearing structure 1200, and the firstadhesion is weaker than the second adhesion. In an embodiment, a thirdadhesion exists between the attaching surfaces 1115 of the plurality ofLED chips 1110 and the first surface 1101 of the first load-bearingstructure 1100, and the third adhesion is stronger than the firstadhesion. In an embodiment, the third adhesion is weaker than or equalto the second adhesion. As shown in FIG. 3D, when the first surface 1101of the first load-bearing structure 1100 and the second face 1201 of thesecond load-bearing structure 1200 are pressed together by the presser700 of the transfer mechanism 1900, the unqualified chips 1112 are notattached to and transferred by the second surface 1201 of the secondload-bearing structure 1200 because of the thin film 910 on the topsurfaces 1113 of the unqualified chips 1112 causing the first adhesionbetween the thin film 910 and the second surface 1201 of the secondload-bearing structure 1200 weaker than the third adhesion between theattaching surface 1115 of the LED chips 1110 and the first surface 1101of the first load-bearing structure 1100. Therefore, the unqualifiedchips 1112 would remain on the first load-bearing structure 1100. Incontrast, the top surfaces 1113 of the qualified chips 1111 would beattached to the second surface 1201 of the second load-bearing structure1200 by the presser 700 pressing the first load-bearing structure 1100and the second load-bearing structure 1200, wherein the third adhesionis weaker than the second adhesion in the embodiment, so the qualifiedchips 1111 would be separated from the first surface 1101 the firstload-bearing structure 1100 and transferred to the second surface 1201of the second load-bearing structure 1200 from the first surface 1101 ofthe first load-bearing structure 1100 in one batch (single-batch).

In an embodiment, the liquid 900 is coated on the chip’s surface, andsolidifies to form the thin film 910 after rested for a while. In anembodiment, the process to form the thin film 910 includes removing somesolvent from the liquid 900. After the solvent is removed from theliquid 900, the liquid 900 solidifies to form the thin film 910. Then,the first load-bearing structure 1100 and the second load-bearingstructure 1200 are pressed together by the presser 700. As such, thetransfer yield of the single-batch transfer of chips can be increased.In the embodiment, the rest time is about 20 minutes to 1 hour.

In an embodiment, when the qualified chips 1111 are transferred by thesecond surface 120 of the second load-bearing structure 1200, thetransfer effect can be enhanced by a peptization process removing theadhesion between the surface 1101 and the qualified chips 1111, whichmeans the third adhesion is further weakened. In an embodiment, thepeptization process means coating a peptizer, such as acetone, on placesof the first surface 1101 or the back surface 1121 of the firstload-bearing structure 1100 corresponding to the attaching positions ofthe qualified chips 1111 to remove the adhesion of the first surface1101 of the first load-bearing structure 1100. Or, when the firstload-bearing structure 1100 includes a UV type, the peptization processmeans illuminating the places of the first load-bearing structure 1100corresponding to the attaching position of the qualified chips 1111 withUV light to remove the adhesion between the first surface 1101 of thefirst load-bearing structure 1100 and the qualified chips 1111.

In an embodiment, the single-batch transfer is accomplished by theadhesion difference between the surfaces of the two load-bearingstructures. When the adhesion difference between the second surface 1201of the second load-bearing structure 1200 and the first surface 1101 ofthe first load-bearing structure 1100 is larger than 0.4 newton (N), thesecond load-bearing structure 1200 can attach the qualified chips 1111from the first surface 1101 to the second surface 1201 by the adhesionof the second surface 1201. The adhesion difference between the firstload-bearing structure 1100 and the second load-bearing structure 1200can be achieved by selecting the material of the two load-bearingstructures with different adhesion from each other or by theaforementioned peptization process. The adhesion difference between thetwo load-bearing structures varies with the chip size. For example, asthe chip size is larger, the adhesion difference between the surfaces ofthe two load-bearing structures is larger. In addition, since the liquid900 is only coated partially on the top surface 1113 of the unqualifiedchips and there is still a limit for the adhesion differences betweenthe unqualified chips 1112 and the qualified chips 1111 and the secondload-bearing structure 1200 caused by the surface characteristic of thethin film 910, the adhesion difference between the surfaces of the twoload-bearing structures should not be too large so as to avoid the firstadhesion of the first surface 1101 of the first load-bearing structure1100 being too small which causes the unqualified chips 1112 having thethin film 910 transferred to the second surface 1201 of the secondload-bearing structure 1200 along with the qualified chips 1111. In anembodiment, based on the foregoing considerations, the adhesiondifference between the surfaces of the first load-bearing structure 1100and the second load-bearing structure 1200 is in the range between 0.4 Nand 2.5 N.

In the embodiment, if the qualified chips 1111 are attached to the firstload-bearing structure 1100 with the top surfaces 1113 upward, thequalified chips 1111 would be attached to the second load-bearingstructure 1200 with the attaching surfaces 1115 upward after qualifiedchips 1111 are transferred by the single-batch transfer method disclosedin the embodiment. Depending on the requirement, if the qualified chips1111 are re-converted to be with the top surface 1113 upward, allqualified chips 1111 can be transferred to another load-bearingstructure in single-batch without changing the corresponding positionthereof by the above-mentioned peptization process or adhesiondifference. In addition, in order to make the transfer more accurate,the single-batch transfer mechanism can further include a chippositioning mechanism (not shown in the figure), and the chippositioning mechanism can be, for example, an image recognizer which canbe used to confirm whether the chips on the load-bearing structure shiftbefore the single-batch transfer. In an embodiment, the chip positioningmechanism is the chip positioning mechanism 1600 in the chiptransferring apparatus 1500, and the image recognizer is the CCD 1610.

FIG. 4 is a top view of the second load-bearing structure 1200 after theunqualified chips 1112 are removed in accordance with the firstembodiment of the present disclosure, which includes a metal expansionring 2000 used to fix the second load-bearing structure 1200. After theprocess of single-batch transfer of the chips according to the aboveembodiment, the second surface 1201 of the second load-bearing structure1200 bears a plurality of qualified chips 1111 and vacancies 1202corresponding to where the originally unqualified chips 1112 located.Since all of the LED chips 1110 undergo the above-mentioned detection ofcharacteristic values, the wafer map file of the photoelectriccharacteristic value and the corresponding position of each chip on thefirst load-bearing structure 1100 is generated. Therefore, throughsoftware operation, the wafer map file of the photoelectriccharacteristic value and the corresponding position of each qualifiedchips 1111 on the second load-bearing structure 1200 can be obtained.The photoelectric characteristic value of each of the qualified crystalchips 1111 is recorded in the wafer map file which includes the dominantwavelength value of each of the qualified chips 1111.

FIGS. 5A-5D show flow charts for single-batch transfer of a plurality ofqualified chips 1111 and unqualified chips 1112 in accordance with asecond embodiment of the present disclosure. FIG. 5A is across-sectional view of the first load-bearing structure 1100 takenalong line A-A′ in FIG. 2 . The second embodiment uses the same chiptransferring apparatus 1500 as used in the first embodiment, and thetransfer method is described later. As shown in FIG. 5A, the firstsurface 1101 of the first load-bearing structure 1100 bears a pluralityof LED chips 1110 thereon. Each of LED chips 1110 includes a top surface1113 and a attaching surface 1115 opposite to the top surface 1113, andthe LED chips 1110 are attached to the first surface 1101 through theattaching surface 1115. The first load-bearing structure 1100 furtherincludes a back surface 1121 opposite to the first surface 1101.Referring to FIG. 5A, the first load-bearing structure 1100 bears afirst portion of the plurality of LED chips categorized as the qualifiedchip 1111 whose photoelectric characteristic value (for example,dominant wavelength) falls within the qualified range, and a secondportion of the plurality of LED chips categorized as the unqualifiedchip 1112 whose photoelectric characteristic value (for example,dominant wavelength) falls within the unqualified range, i.e. theunqualified chips 1112.

Next, as shown in FIG. 5B, during the process of transferring theplurality of chips, the image recognizer 1610 of the chip positioningmechanism 1600 of the chip transferring apparatus 1500 of the firstembodiment, such as a chip locator 1610″ in the embodiment, is used toconfirm the relative positions of the plurality of LED chips 1110 on thefirst load-bearing structure 1100, and the computer 1620 is used toconstruct and apply the wafer map file of the photoelectriccharacteristic values of the plurality of LED chips 1110 so as todistinguish the positions of the qualified chips 1111 and theunqualified chips 1112 and feed it back to the separation mechanism1800. The computer 820 of the separation mechanism 1800 sets a pathbased on the aforementioned wafer map file. As shown in FIG. 5B, theseparator 800 of the separation mechanism 1800, such as a liquid coatingdevice in the embodiment, coats a liquid 1910, such as an adhesionenhancement agent, on the top surface 1113 (opposite to the attachingsurface 1115) of each of the unqualified chips 1112 according to thepath set by the computer 820. The liquid 1910 solidifies on the topsurface 1113 of each of the unqualified chips 1112 to form a thin film1920 whose surface characteristic is different from that of the topsurface 1113. Next, referring to FIG. 5C, the second load-bearingstructure 2200 is disposed on the top surface 1113 of the LED chips1110. The second load-bearing structure 2200 has the function of fixingand bearing the chips. For example, the second load-bearing structure1200 includes a structure with a surface having adhesive material, suchas an adhesive tape, formed thereon. In an embodiment, the adhesive tapeis selected from a white film tape, a blue film tape or a UV tape. Inthe embodiment, the blue film tape is used. The second load-bearingstructure 2200 includes a second surface 2201 which is adhesive andfacing the top surfaces 1113 of the plurality of LED chips 1110 and thefirst surface 1101 of the first load-bearing structure 1100. In anembodiment, the thin film 1920 includes a surface characteristicdifferent from that of the top surface 1113. In the embodiment, a firstadhesion exists between the thin film 1920 and the second surface 2201of the second load-bearing structure 2200, a second adhesion existsbetween the top surfaces 1113 of the plurality of LED chips 1110 and thesecond surface 2201 of the second load-bearing structure 2200, and thefirst adhesion is stronger than the second adhesion. In an embodiment, athird adhesion exists between the attaching surfaces 1115 of theplurality of LED chips 1110 and the first surface 1101 of the firstload-bearing structure 1100, and the third adhesion is weaker than thefirst adhesion. In an embodiment, the third adhesion is stronger thanthe second adhesion. As shown in FIG. 5D, when the first surface 1101 ofthe first load-bearing structure 1100 and the second face 2201 of thesecond load-bearing structure 2200 are pressed together by the presser700, the unqualified chips 1112 are attached to the second surface 2201of the second load-bearing structure 2200 because of the thin film 1920on the top surfaces 1113 of the unqualified chips 1112 causing the firstadhesion between the thin film 1920 and the second surface 2201 of thesecond load-bearing structure 2200 stronger than the third adhesionbetween the attaching surface 1115 of the LED chips 1110 and the firstsurface 1101 of the first load-bearing structure 1100. Therefore, theunqualified chips 1112 would be attached to the second surface 2201 ofthe second load-bearing structure 2200 in single-batch from the firstsurface 1101 of the first load-bearing structure 1100 by the presser 700pressing the first load-bearing structure 1100 and the secondload-bearing structure 1200.

After the process of single-batch transfer of the chips according to theabove embodiment, the first surface 1101 of the first load-bearingstructure 1200 bears a plurality of qualified chips 1111 and vacancies1202 corresponding to where the originally unqualified chips 1112located, as shown in FIG. 6 . In other words, FIG. 6 is a top view ofthe first load-bearing structure 1100 after the unqualified chips 1112is removed in accordance with the second embodiment of the presentdisclosure, which includes a metal expansion ring 1000 used to fix thefirst load-bearing structure 1100. Since all of the LED chips 1110undergo the above-mentioned detection for characteristic values, thewafer map file of the photoelectric characteristic value and thecorresponding position of each LED chip 1110 on the first load-bearingstructure 1100 is generated. Therefore, after the unqualified chips 1112are removed, the wafer map file of the photoelectric characteristicvalue and the corresponding position of each qualified chips 1111 on thefirst load-bearing structure 1100 can be obtained. The photoelectriccharacteristic value of each of the qualified crystal chips 1111 arerecorded in the wafer map file which includes the dominant wavelengthvalue of each of the qualified chips 1111.

In an embodiment of the present disclosure, the qualified chips selectedby the above-mentioned single-batch transfer method can be furthertransferred and sorted. FIGS. 7 and 8 show a chip-block transferring andsorting method in accordance with the third embodiment of the presentdisclosure. In the embodiment, the description of the block transferringand sorting is illustrated by taking the qualified chips aftertransferred and sorted according to the first embodiment as an example.The sorting method of the qualified chips is not limited thereto, andthe conventional transferring and sorting method can also be used as analternative. Referring to FIG. 7 , the qualified chips 1111 aftertransferred are disposed on the second load-bearing structure 1200. Thequalified chips 1111 on the second load-bearing structure 1200 can becategorized based on the photoelectric characteristic values inaccordance with the shipping requirements. Taking the blue LED chips1110 whose emitting wavelength is between 440 nm and 460 nm as anexample, the dominant wavelength can be further divided into eightcategories, including a first category whose dominant wavelength isbetween 447.5 nm and 450 nm, a second category whose dominant wavelengthis between 445 nm and 447.5 nm, a third category whose dominantwavelength is between 442.5 nm and 445 nm, a fourth category whosedominant wavelength is between 440 nm and 442.5 nm, a fifth categorywhose dominant wavelength is between 450 nm and 452.2 nm, a sixthcategory whose dominant wavelength is between 452.5 nm and 455 nm, aseventh category whose dominant wavelength is between 455 nm and 457.5nm, and a eighth category whose dominant wavelength is between 457.5 nmand 460 nm. Then, the qualified chips 1111 shown in FIG. 7 are dividedinto a plurality of sorting blocks according to the dominant wavelengthsthereof.

In the embodiment, different from the conventional method ofcategorizing chips which sorts chips repeatedly, the method of blocktransferring and sorting is to divide the qualified chips 1111 into ninevirtual blocks 1200-1 to 1200-9. In the embodiment, a broken line on thesecond load-bearing structure 1200 represents the corresponding boundaryline between the blocks. Each block includes 7 to 14 qualified chips1111. In an embodiment, since the epitaxial growth and chip process ofthe LED have certain stability and quality, all chips or the chipslocating at the neighborhood should have similar photoelectriccharacteristic values. Therefore, based on the wafer map file, thephotoelectric characteristic values of the plurality of qualifiedcrystal chips 1111 in each block can be averaged and calculated toobtain an average photoelectric characteristic value of each block.Taking the dominant wavelength of the embodiment as an example, theaverage photoelectric characteristic values of nine dominant wavelengthsof nine virtual blocks 1200-1 to 1200-9 can be calculated. Next,according to the aforementioned categories in ranges of the dominantwavelengths, the plurality of qualified chips in each block can becategorized into different categories by ranges of dominant wavelengthsaccording to the average photoelectric characteristic values thereof.Depending on the requirements, the size and the shape of each block canbe the same or different.

In an embodiment, when the qualified chips 1111 are divided into ninevirtual blocks 1200-1 to 1200-9, each block includes 7 to 14 qualifiedchips 1111. Based on the fact that the plurality of qualified chips inthe same region includes the similar photoelectric characteristics,according the wafer map file, in each block, a few chips whosephotoelectric characteristic values are different from that of mostchips are removed, and then the chips with the similar photoelectriccharacteristic values are left on the second load-bearing structure1200. For example, the photoelectric characteristic values (dominantwavelength) of 5 out of 7 chips in the block 1200-1 fall within therange between 447.5 nm and 450 nm, and the other 2 chips whosephotoelectric characteristic values do not fall within the range areremoved manually or by machine. Next, according to the aforementionedcategories in ranges of the dominant wavelengths, the plurality ofqualified chips in each block can be categorized into the differentcategories by ranges of dominant wavelengths according to the averagephotoelectric characteristic values thereof. Details will be describedlater. Depending on the requirements, the size and the shape of eachblock can be the same or different.

After the average photoelectric characteristic value of the plurality ofthe qualified chips 1111 are categorized, the image recognizer 1610 ofthe chip positioning mechanism 1600 of the chip transferring apparatus1500 mentioned in the above embodiment, such as a chip locator in theembodiment, is used to confirm the corresponding positions of theplurality of qualified chips 1111 on the second load-bearing structure1200, and the computer 1620 is used to construct the wafer map file ofthe photoelectric characteristic values of the plurality of qualifiedchips 1111 and feed it back to the separation mechanism 1800. Thecomputer 820 of the separation mechanism 1800 sets a path according tothe aforementioned wafer map file. FIG. 8 shows a partialcross-sectional view taken along B-B′ in the FIG. 7 with the chiptransferring apparatus in accordance with the third embodiment of thepresent disclosure. As shown in FIG. 8 , the basic structure of the chiptransferring apparatus in the embodiment is similar to that of the chiptransferring apparatus 1500 mentioned in the first embodiment. Thedifference is that the second load-bearing structure 1200 includes asecond load-bearing structure mount 1210. The above-mentioned secondload-bearing structure 1200 which is divided into nine virtual blocks1200-1 to 1200-9 is disposed on the second load-bearing structure mount1210. The second load-bearing structure 1200 includes the second surface1201 upward which used to bear the qualified chips 1111 thereon. A thirdload-bearing structure 1300 is disposed on the second surface 1201. Forexample, the third load-bearing structure 1300 includes a structure witha surface having adhesive material thereon, such as a white film tape, ablue film tape or a UV tape. In the embodiment, the blue film tape isused. The third load-bearing structure 1300 includes a third surface1300 with an adhesion corresponding to the second surface 1201. In theembodiment, the third load-bearing structure 1300 includes a thirdload-bearing structure mount 1310 which is disposed on the side oppositeto the third surface 1300. The chip transferring apparatus furtherincludes a relative image recognizer (not shown in the figure) which isused to detect the positions of the load-bearing structure mounts 1210and 1310 relative to the load-bearing structures 1200 and 1300, and moveor adjust the positions of the second load-bearing structure mounts 1210and the third load-bearing structure mounts 1310 relative to the secondthe load-bearing structure 1200 and the third the load-bearing structure1300 according to the detection results.

Here, the second load-bearing structure mounts 1210 and the thirdload-bearing structure mounts 1310 are, for example, the above-mentionedpressers 700 of the chip transferring apparatus 1500, which respectivelyincludes flat pressing faces 1211 and 1311 opposite to each other. Thearea and size of at least one of the pressing faces 1211 and 1311 matchthose of the virtual blocks 1200-1 to 1200-9. In an embodiment, the areaof pressing face 1211 and/or the pressing face 1311 can be larger thanor equal to that of the virtual blocks 1200-1 to 1200-9 to facilitatesubsequently transferring the plurality of qualified chips 1111 in theblock. Since the size and shape of the virtual blocks can be different,the second load-bearing structure mount 1210 and the third load-bearingstructure mount 1310 can be correspondingly replaced according to thesize and shape of the virtual blocks to meet the size and shape ofdifferent blocks. In the embodiment, the load-bearing structure mount1210 with the pressing faces 1211 whose size and shape are the same asthose of the virtual block 1200-5 and the third load-bearing structuremount 1310 with the pressing faces 1311 whose size and shape are thesame as those of the virtual block 1200-5 can be selected, and afterdetected by the relative image recognizer, the pressing faces 1211 and1311 are moved to the position corresponding to the virtual block 1200-5and pressed together. By confirming with the relative image recognizer,the accuracy of the pressers 700, i.e. the load-bearing structure mounts1210 and 1310, relative to the second surface 1201 and the third surface1301 is confirmed, so that the second surface 1201 and the third surface1301 are pressed flatly with each other. When the second load-bearingstructure mount 1210 and the third load-bearing structure mount 1310 arepressed up and down, the plurality of qualified chips 1111 in the block1200-5 on the second surface 1201 of the second load-bearing structure1200 can be transferred to the third face 1301 of the third load-bearingstructure 1300 in single-batch by the above-mentioned peptizationprocess or adhesion difference. After repeating the above-mentionedmethod, the plurality of qualified chips 1111 in the block can betransferred from the second surface 1201 of the second load-bearingstructure 1200 to the third surface 1301 of the third load-bearingstructure 1300 one block by one block. Therefore, although the size andarea of the virtual blocks 1200-1 to 1200-9 can be chosen according torequirements, such as the chips size, in order to increase theefficiency of transferring virtual blocks and reduce the number ofreplacements of the transfer mechanism 1900, each virtual block isdivided into the block with the same area or size.

In an embodiment, the number of the third load-bearing structure 1300can be multiple. For example, the third load-bearing structure 1300 canbe the collecting films categorized by the photoelectric characteristicvalues. Further, the plurality of qualified chips in each block istransferred to the plurality of third load-bearing structure 1300 insingle-batch by the above-mentioned chip-block transferring and sortingmethod to achieve categorizing. In another embodiment, the photoelectriccharacteristic values include a luminescence, a light-emittingwavelength, an operating voltage, an electric current or the combinationthereof. In the embodiment, different third load-bearing structures 1300are prepared based on the above-mentioned categories in ranges of thedominant wavelengths, and the plurality of qualified chips 1111 in theblock, whose average dominant wavelength falls within the same categoryrange, are transferred to the same third load-bearing structures 1300.For example, the first third load-bearing structure 1300 is thecollecting film collecting the chips whose dominant wavelengths fallbetween 447.5 nm and 450 nm. If the average dominant wavelengths of theblocks 12001-1 and 1200-3 in the nine blocks 1200-1 to 1200-9 fallbetween 447.5 nm and 450 nm, the plurality of qualified chips in thesetwo blocks are transferred to the third load-bearing structure 1300 insingle-batch by the above-mentioned single-batch transfer method tocomplete the sorting of the chips with the same dominant wavelength.

Similarly, the first load-bearing structure 1100 after removing theunqualified chips 1112 of the second embodiment can be correspondinglyapplied to the chip-block transferring and sorting method of the thirdembodiment, and then the plurality of qualified chips 1111 istransferred in single-batch to complete categorizing the qualified chips1111 on the first load-bearing structure 1100.

In another embodiment, the virtual blocks 1200-1 to 1200-9 are directlydivided, for example, by cutting the blue file tape with a cuttingknife, into nine blocks according to the division of the virtual blocks.In this way, the divided blocks can be transferred to the subsequentdifferent third load-bearing structures 1300 in batches according to therange of the dominant wavelengths through the above-mentionedpeptization process or adhesion difference and without changing therelative position between chips in the same block. After repeatingseveral times, the categorization of the chips can be completed as abovementioned.

In the embodiment, the chips are transferred one block by one block.Therefore, it can be understood that after being transferred, theplurality of qualified chips 1111 in a block originally located on thesecond surface 1201 of the second load-bearing structure 1200 aretransferred to the third surface 1310 of third load-bearing structure1300 in the same corresponding positional relationship. Subsequently,the wafer map file of photoelectric characteristic values of theplurality of chips transferred to the third surface 1301 of the thirdload-bearing structure 1300 can be obtained through the image recognizerand the computer.

According to the structure and process disclosed in the aforementionedembodiment, the technology of the present disclosure can be furtherapplied to the structures of different kinds of optoelectronic systems,such as illumination device, display device, projecting apparatus orindicating device. FIG. 9 shows an explosion diagram of theoptoelectronic system 3000 in accordance with the fourth embodiment ofthe present disclosure. The optoelectronic system 3000 includes a cover41′, an optical device 42′ disposed in the cover 41′, a light module 44coupled to the optical device 42′, a mount 45 having heat dissipationfins 46 and used to support the light module 44, a connector 47, and anelectrical connector 48, wherein the connector 47 connects the mount 45and the electrical connector 48. In an embodiment, the connector 47 canbe integrated into the mount 45, which means the connector 47 is aportion of the mount 45. The light module 44 includes a carrier 43 and aplurality of semiconductor devices 40 disposed on the carrier 43,wherein the semiconductor devices 40 can be the qualified chips 111after transferred and sorted according the aforementioned embodiments.In an embodiment, the plurality of semiconductor devices 40 istransferred to the carrier 43 by the transferring and sorting method ofthe aforementioned embodiments. The optical device 42′ can optionallyinclude a refraction structure, a reflection structure, a diffusionstructure, a guiding structure, or the combination thereof in order toextract the light emitted by the semiconductor devices 40 out from thecover 41′, or adjust the optical effect according to the applicationrequirements of the optoelectronic system 3000.

FIG. 10 shows an optoelectronic system 4000 in accordance with the fifthembodiment of the present disclosure. The optoelectronic system 4000 canbe an LED display device, including a backplane 49, a plurality ofpicture elements 40′ disposed on and electrically connected to thebackplane 49, and a control module 49′ electrically connected to thebackplane 49 and the plurality of picture element s 40′, wherein each ofthe plurality of picture elements 40′ includes one or more semiconductordevice 40 b, such as the qualified chips 111 after transferred andsorted according the aforementioned embodiments. In an embodiment, theoptoelectronic system 4000 includes a plurality of control modules 49′respectively corresponding to and connected to the plurality of pictureelements 40′. In an embodiment, the semiconductor devices 40 b aretransferred by the transferring and sorting method of the aforementionedembodiments. The semiconductor devices 40 b are controlledsimultaneously or separately by one or more control modules 49′. In theembodiment, through the controlling of the control modules 49′, theluminous intensity and timing of the three semiconductor devices 40 b inone picture element 40′ can be separately controlled. In the pictureelement 40′, the first semiconductor device 40 b emits a red light, thesecond semiconductor device 40 b emits a green light, and the thirdsemiconductor device 40 b emits a blue light. In an embodiment, theplurality of semiconductor devices 40 b can emit the light with the samecolor, such as blue light. In an embodiment, in the picture element 40′,the first semiconductor device 40 b includes a LED or a laser diode(LD)emitting a blue light or an UV light, which is covered by a redwavelength converting material, such as red phosphor or red quantum dotmaterial. The first semiconductor device 40 b emits a red light byexciting the red wavelength converting material with the blue light orthe UV light of the light emitting device. The second semiconductordevice 40 b includes a LED or a LD emitting a blue light or an UV light,which is covered by a green wavelength converting material, such asgreen phosphor or green quantum dot material. The second semiconductordevice 40 b emits a green light by exciting the green wavelengthconverting material with the blue light or the UV light of the lightemitting device. The third semiconductor device 40 b includes a LED orLD emitting a blue light or an UV light, which is covered by a bluewavelength converting material, such as blue phosphor or blue quantumdot material. The third semiconductor device 40 b emits a blue light byexciting the blue wavelength converting material with the blue light orthe UV light of the light emitting device. The semiconductor devices 40b can be disposed on the backplane 49 in a matrix, for example, in a rowand/or in a column, and can be arranged in a regular or irregularmanner. In an embodiment, a distance d preferably between 100 µm and 5mm exists between any two adjacent picture elements 40′, and a distanced′ preferably between 100 µm and 500 µm exists between any two adjacentsemiconductor devices 40 b within one picture element 40′.

The principle and the efficiency of the present application illustratedby the embodiment above are not the limitation of the application. Anyperson having ordinary skill in the art can modify or change theaforementioned embodiments. Therefore, the protection range of therights in the present application will be listed as the followingclaims.

What is claimed is:
 1. A chip transferring method, comprising: providinga plurality of chips on a first load-bearing structure; measuringphotoelectric characteristic values of the plurality of chips;categorizing the plurality of chips into a first portion chips and asecond portion chips according to the photoelectric characteristicvalues of the plurality of chips, wherein the second portion chipscomprise parts of the plurality of chips which photoelectriccharacteristic value falls within an unqualified range; removing thesecond portion chips from the first load-bearing structure; dividing thefirst portion chips into a plurality of blocks according to thephotoelectric characteristic values, and each of the plurality of blockscomprising multiple chips of the first portion chips; and transferringthe multiple chips of one of the plurality of blocks to a secondload-bearing structure.
 2. The chip transferring method according toclaim 1, wherein removing the second portion chips from the firstload-bearing structure comprises: weakening a first adhesion between thesecond portion chips and the first load-bearing structure; andtransferring the second portion chips from the first load-bearingstructure.
 3. The chip transferring method according to claim 2, whereinthe step of weakening the first adhesion comprises a peptizationprocess.
 4. The chip transferring method according to claim 3, whereinthe peptization process comprises illuminating the first load-bearingstructure with light.
 5. The chip transferring method according to claim1, further comprising forming a peptizer on surfaces of the firstportion chips or the second portion chips.
 6. The chip transferringmethod according to claim 1, wherein the photoelectric characteristicvalue comprises a luminescence, a light-emitting wavelength, anoperating voltage or an electric current.
 7. The chip transferringmethod according to claim 1, further comprising: recording thephotoelectric characteristic values of the plurality of chips to form awafer map file based on a position of each of the plurality of chips onthe first load-bearing structure.
 8. The chip transferring methodaccording to claim 1, wherein dividing the first portion chips into aplurality of blocks according to the photoelectric characteristic valuescomprises cutting the first load-bearing structure according to theplurality of blocks.
 9. The chip transferring method according to claim1, wherein transferring the multiple chips of one of the at least twoblocks of the plurality of blocks to the third load-bearing structure isin single-batch.
 10. The chip transferring method according to claim 1,further comprising calculating an average photoelectric characteristicvalue of each of the plurality blocks.
 11. The chip transferring methodaccording to claim 1, wherein the plurality of blocks comprises aplurality of virtual blocks.
 12. A display device, comprising: abackplane; a plurality of picture elements, disposed on the backplane,comprising the multiple chips transferred by the chip transferringmethod according to claim 1; and a control module, electricallyconnecting the plurality of picture elements.
 13. The display deviceaccording to claim 12, further comprising a wavelength convertingmaterial formed on the multiple chips, and wherein the wavelengthconverting material comprises phosphor or quantum dot material.
 14. Thedisplay device according to claim 12, wherein the multiple chips in oneof the plurality of picture elements comprises a first chip emits bluelight, a second chip emits green light and a third chip emits red light.15. The display device according to claim 12, wherein a distance betweentwo adjacent picture elements of the plurality of picture elements isbetween 100 µm and 5 mm.
 16. The display device according to claim 12,wherein a distance between two adjacent chips of the multiple chips inone of the plurality of picture elements is between 100 µm and 500 µm.